Comparison of Plasma Parameters in CCP and ICP Processes Appropriate for Carbon Nanotube Growth
نویسندگان
چکیده
Vertically aligned carbon nanotubes (CNTs) were grown on Si substrates by radio frequency (RF) plasma enhanced chemical vapor deposition. We investigated plasma conditions suitable for CNT growth by measuring plasma parameters and observing optical emission spectrometry near the substrate. Comparison in plasma parameters was also made between a capacitively coupled plasma (CCP) and an inductively coupled plasma (ICP) excited in an identical plasma reactor. The measured electron temperature of CCP was higher than that of ICP, while the electron density of CCP was smaller than that of ICP. Vertically aligned CNTs were produced with -10 V bias to the substrate for CCP, while they were produced with bias more negative than -200 V for ICP.
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